The diffusion induced grain-boundary migration (DIGM) and its effect on the dielectric properties of semiconducting SrTiO3-based dielectrics have been investigated. Two kinds of experimental techniques were adapted: diffusion annealing and liquid infiltration. In most of the added solute compositions, interface migration occurred, forming a new solid solution containing solute species in the migrated regions. With a decreasing migration distance, the effective dielectric constant increased and exhibited the highest value for the sample without interface imigration. The considerable improvement in dielectric properties of the sample without migration was attributed to the minimum thickness of the oxidation layer formed during the annealing or infiltration.