DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, CY | ko |
dc.contributor.author | Kim, YS | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T21:46:34Z | - |
dc.date.available | 2013-03-04T21:46:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-12 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84268 | - |
dc.description.abstract | We investigate the effect of phosphorus doping on the atomic structure of B-related defects in crystalline Si through first-principles pseudopotential calculations. We find that a B-P complex is the most stable defect, with a binding energy of about 0.3 eV, compared with isolated B and P ions. When Si self-interstitials (I-s) are generated by ion implantation, B and P dopants form an I-s-B-P complex. The stability of the I-s-B-P complex is greatly enhanced as the Fermi level increases, compared with the I-s-B complex. The formation of the B-P and I-s-B-P complexes is suggested to be responsible for the suppression of B diffusion in Si predoped with donor impurities. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject | BORON-DIFFUSION | - |
dc.subject | AB-INITIO | - |
dc.subject | SILICON | - |
dc.subject | PSEUDOPOTENTIALS | - |
dc.title | First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus | - |
dc.type | Article | - |
dc.identifier.wosid | 000188300200114 | - |
dc.identifier.scopusid | 2-s2.0-0346686010 | - |
dc.type.rims | ART | - |
dc.citation.volume | 340 | - |
dc.citation.beginningpage | 561 | - |
dc.citation.endingpage | 564 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Moon, CY | - |
dc.contributor.nonIdAuthor | Kim, YS | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | B diffusion | - |
dc.subject.keywordAuthor | B-P pair | - |
dc.subject.keywordAuthor | TED suppression | - |
dc.subject.keywordPlus | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject.keywordPlus | BORON-DIFFUSION | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
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