First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 214
  • Download : 0
We investigate the effect of phosphorus doping on the atomic structure of B-related defects in crystalline Si through first-principles pseudopotential calculations. We find that a B-P complex is the most stable defect, with a binding energy of about 0.3 eV, compared with isolated B and P ions. When Si self-interstitials (I-s) are generated by ion implantation, B and P dopants form an I-s-B-P complex. The stability of the I-s-B-P complex is greatly enhanced as the Fermi level increases, compared with the I-s-B complex. The formation of the B-P and I-s-B-P complexes is suggested to be responsible for the suppression of B diffusion in Si predoped with donor impurities. (C) 2003 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2003-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

TRANSIENT ENHANCED DIFFUSION; BORON-DIFFUSION; AB-INITIO; SILICON; PSEUDOPOTENTIALS

Citation

PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564

ISSN
0921-4526
URI
http://hdl.handle.net/10203/84268
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0