DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, BD | ko |
dc.contributor.author | Kim, Lee-Sup | ko |
dc.date.accessioned | 2013-03-04T21:18:03Z | - |
dc.date.available | 2013-03-04T21:18:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-04 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.38, pp.641 - 653 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84181 | - |
dc.description.abstract | In a memory, most power is dissipated in high-capacitive lines such as predecoder lines, wordlines, and bitlines. To reduce the power dissipation in these high-capacitive lines, this paper proposes three techniques using charge recycling and charge sharing. The first is the charge recycling predecoder (CRPD) , the second is the charge recycling wordline decoder (CRWD), and the last one is the charge sharing bitline (CSBL) for a ROM. The CRPD and the CRVM recycle the previously used charge in predecoder lines and wordlines. Theoretically, the power consumption in predecoder lines and wordlines are reduced to a half. The CSBL reduces the swing voltage in the ROM bitlines to very small voltage using a charge sharing technique with three small capacitors. The CSBL can significantly reduce the power dissipation in ROM bitlines. The CRPD, the CRWD, and the CSBL consume 82%, 72%, and 64%, respectively, of the power of previous ROM designs. A charge recycling and charge sharing ROM (CRCS-ROM) with the CRPD, the CRWD, and the CSBL is implemented. A CRCS-ROM with 8K x 16 bits was fabricated in a 0.35-mum CMOS process. The CRCS-ROM consumes 8.63 mW at 100 MHz with 3.3 V. The chip core area is 0.51 mm(2). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | BUS ARCHITECTURE | - |
dc.title | A low-power ROM using charge recycling and charge sharing techniques | - |
dc.type | Article | - |
dc.identifier.wosid | 000181838300008 | - |
dc.identifier.scopusid | 2-s2.0-0037390642 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.beginningpage | 641 | - |
dc.citation.endingpage | 653 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.contributor.localauthor | Kim, Lee-Sup | - |
dc.contributor.nonIdAuthor | Yang, BD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | bitline | - |
dc.subject.keywordAuthor | charge recycling | - |
dc.subject.keywordAuthor | charge sharing | - |
dc.subject.keywordAuthor | low-power design | - |
dc.subject.keywordAuthor | predecoder line | - |
dc.subject.keywordAuthor | ROM | - |
dc.subject.keywordAuthor | VLSI design | - |
dc.subject.keywordAuthor | wordline | - |
dc.subject.keywordPlus | BUS ARCHITECTURE | - |
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