A low-power ROM using charge recycling and charge sharing techniques

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dc.contributor.authorYang, BDko
dc.contributor.authorKim, Lee-Supko
dc.date.accessioned2013-03-04T21:18:03Z-
dc.date.available2013-03-04T21:18:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-04-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.38, pp.641 - 653-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/84181-
dc.description.abstractIn a memory, most power is dissipated in high-capacitive lines such as predecoder lines, wordlines, and bitlines. To reduce the power dissipation in these high-capacitive lines, this paper proposes three techniques using charge recycling and charge sharing. The first is the charge recycling predecoder (CRPD) , the second is the charge recycling wordline decoder (CRWD), and the last one is the charge sharing bitline (CSBL) for a ROM. The CRPD and the CRVM recycle the previously used charge in predecoder lines and wordlines. Theoretically, the power consumption in predecoder lines and wordlines are reduced to a half. The CSBL reduces the swing voltage in the ROM bitlines to very small voltage using a charge sharing technique with three small capacitors. The CSBL can significantly reduce the power dissipation in ROM bitlines. The CRPD, the CRWD, and the CSBL consume 82%, 72%, and 64%, respectively, of the power of previous ROM designs. A charge recycling and charge sharing ROM (CRCS-ROM) with the CRPD, the CRWD, and the CSBL is implemented. A CRCS-ROM with 8K x 16 bits was fabricated in a 0.35-mum CMOS process. The CRCS-ROM consumes 8.63 mW at 100 MHz with 3.3 V. The chip core area is 0.51 mm(2).-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectBUS ARCHITECTURE-
dc.titleA low-power ROM using charge recycling and charge sharing techniques-
dc.typeArticle-
dc.identifier.wosid000181838300008-
dc.identifier.scopusid2-s2.0-0037390642-
dc.type.rimsART-
dc.citation.volume38-
dc.citation.beginningpage641-
dc.citation.endingpage653-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.contributor.localauthorKim, Lee-Sup-
dc.contributor.nonIdAuthorYang, BD-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorbitline-
dc.subject.keywordAuthorcharge recycling-
dc.subject.keywordAuthorcharge sharing-
dc.subject.keywordAuthorlow-power design-
dc.subject.keywordAuthorpredecoder line-
dc.subject.keywordAuthorROM-
dc.subject.keywordAuthorVLSI design-
dc.subject.keywordAuthorwordline-
dc.subject.keywordPlusBUS ARCHITECTURE-
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