Comparative studies on the growth conditions of CeO2 andY2O(3) buffer layers on NiW tapes

Abstract

We comparatively studied the growth conditions of Y2O3 films and CeO2 films on biaxially textured Ni and NiW tapes. We found that the windows of both substrate temperatures and oxygen partial pressures for the proper growth of CeO2 films were wider than those of Y2O3 films. XRD data showed that the qualities of in-plane and out-of-plane textures of the two types of films were almost similar. The SEM observations indicated that the surface of the CeO2 films was smoother than those of Y2O3 films. The inferiority of CeO2 films to Y2O3 films was crack formation. However, we found that if YSZ over-layers were grown on the CeO2 films using dc-reactive sputtering, the cracks were not observed on the surface of the YSZ films anymore.