DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, MH | ko |
dc.contributor.author | Moon, P | ko |
dc.contributor.author | Kim, HJ | ko |
dc.contributor.author | Na, H | ko |
dc.contributor.author | Seo, HC | ko |
dc.contributor.author | Shin, Y | ko |
dc.contributor.author | Moon, DW | ko |
dc.contributor.author | Sun, Y | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Yoon, E | ko |
dc.contributor.author | Kwon, SY | ko |
dc.date.accessioned | 2013-03-04T20:15:27Z | - |
dc.date.available | 2013-03-04T20:15:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, pp.2818 - 2822 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83968 | - |
dc.description.abstract | We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | FUNDAMENTAL-BAND GAP | - |
dc.subject | INDIUM NITRIDE | - |
dc.subject | DIFFUSION | - |
dc.subject | GROWTH | - |
dc.subject | GE | - |
dc.title | Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading | - |
dc.type | Article | - |
dc.identifier.wosid | 000224218000046 | - |
dc.identifier.scopusid | 2-s2.0-6344291258 | - |
dc.type.rims | ART | - |
dc.citation.volume | 201 | - |
dc.citation.beginningpage | 2818 | - |
dc.citation.endingpage | 2822 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.identifier.doi | 10.1002/pssa.200405076 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Cho, MH | - |
dc.contributor.nonIdAuthor | Moon, P | - |
dc.contributor.nonIdAuthor | Kim, HJ | - |
dc.contributor.nonIdAuthor | Na, H | - |
dc.contributor.nonIdAuthor | Seo, HC | - |
dc.contributor.nonIdAuthor | Shin, Y | - |
dc.contributor.nonIdAuthor | Moon, DW | - |
dc.contributor.nonIdAuthor | Sun, Y | - |
dc.contributor.nonIdAuthor | Yoon, E | - |
dc.contributor.nonIdAuthor | Kwon, SY | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | FUNDAMENTAL-BAND GAP | - |
dc.subject.keywordPlus | INDIUM NITRIDE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GE | - |
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