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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

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dc.contributor.authorJi-Hong Jheko
dc.contributor.authorShin, JungHoonko
dc.contributor.authorKyung Joong Kimko
dc.contributor.authorDae Won Moonko
dc.date.accessioned2013-03-04T20:14:37Z-
dc.date.available2013-03-04T20:14:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-06-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/83964-
dc.description.abstractThe characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sputtering and subsequent annealing at 950 degreesC. The dependence of the Er3+ photoluminescence intensity on the thickness of the Er-doped SiO2 layers is well-described by an exponentially decreasing Er-carrier interaction with a characteristic interaction distance of 0.5+/-0.1 nm. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSI/SIO2 SUPERLATTICES-
dc.subjectSI NANOCRYSTALS-
dc.subjectENERGY-TRANSFER-
dc.subjectPOROUS SILICON-
dc.subjectLUMINESCENCE-
dc.subjectEXCITATION-
dc.subjectDEEXCITATION-
dc.subjectELECTROLUMINESCENCE-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectSEMICONDUCTORS-
dc.titleThe characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering-
dc.typeArticle-
dc.identifier.wosid000183557300027-
dc.identifier.scopusid2-s2.0-0038044806-
dc.type.rimsART-
dc.citation.volume82-
dc.citation.issue25-
dc.citation.beginningpage4489-
dc.citation.endingpage4491-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1586458-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorJi-Hong Jhe-
dc.contributor.nonIdAuthorKyung Joong Kim-
dc.contributor.nonIdAuthorDae Won Moon-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSI/SIO2 SUPERLATTICES-
dc.subject.keywordPlusSI NANOCRYSTALS-
dc.subject.keywordPlusENERGY-TRANSFER-
dc.subject.keywordPlusPOROUS SILICON-
dc.subject.keywordPlusLUMINESCENCE-
dc.subject.keywordPlusEXCITATION-
dc.subject.keywordPlusDEEXCITATION-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSEMICONDUCTORS-
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