Enhancement of the green, visible Tb3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping

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The effect of C co-doping on the Tb3+ luminescence from Tb-doped silicon-rich silicon oxide (SRSO) films is investigated. Tb-doped SRSO films co-doped with C (SRSO:C) were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The Tb3+ photoluminescence intensity is enhanced by the presence of nanocluster Si (nc-Si), and C co-doping further increases the Tb3+ photoluminescence intensity by more than an order of magnitude. The maximum enhancement is observed at the C content of similar to5 at. %, at which the Tb3+ luminescence is bright enough to be observed by the naked eye under ambient conditions. The 543 nm Tb3+ lifetimes were in the range of 0.5-1.2 ms, comparable to those from Tb-doped silica. Based on the results, we conclude that nanometer-sized nc-Si can excite Tb3+ ions via an Auger-type energy transfer, and that C co-doping greatly increases the efficiency of such exciton-mediated excitation of Tb3+. (C) 2004 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2004-05
Language
English
Article Type
Article
Keywords

RARE-EARTH IONS; SI NANOCRYSTALS; QUANTUM DOTS; THIN-FILMS; PHOTOLUMINESCENCE; OXYGEN; ER3+; GAN

Citation

APPLIED PHYSICS LETTERS, v.84, pp.4379 - 4381

ISSN
0003-6951
DOI
10.1063/1.1757015
URI
http://hdl.handle.net/10203/83961
Appears in Collection
NT-Journal Papers(저널논문)
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