DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, AJ | ko |
dc.contributor.author | Kallo, MG | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-04T20:09:29Z | - |
dc.date.available | 2013-03-04T20:09:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-12 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.333 - 336 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83948 | - |
dc.description.abstract | The effect of erbium-doping on the electrical, optical, and structural properties of hydrogenated amorphous silicon (a-Si:H) is investigated. The electrical conductivity and thermopower measurements show that erbium acts as an n-type dopant in a-Si:H. The photoluminescence measurements show that an optical activity of Er decreases as the Er concentration increases beyond 0.04 at. %. Raman and optical absorption measurements show that erbium induces structural disorder and subsequent increase in the bandtail states of a-Si:H. From the temperature dependence of Er3+ photoluminescence intensities, we identify competitive carrier capture by these band-tail states as all important factor in determining the overall Er3+ photoluminescence intensity. And carbon co-doping enhances the Er3+ PL intensity and reduces the temperature quenching of the Er3+ PL intensity. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | CRYSTAL SILICON | - |
dc.subject | THIN-FILMS | - |
dc.subject | LUMINESCENCE | - |
dc.subject | EXCITATION | - |
dc.subject | SI | - |
dc.subject | DEPENDENCE | - |
dc.title | Effects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon | - |
dc.type | Article | - |
dc.identifier.wosid | 000172968700078 | - |
dc.identifier.scopusid | 2-s2.0-0035542142 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.beginningpage | 333 | - |
dc.citation.endingpage | 336 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Kim, AJ | - |
dc.contributor.nonIdAuthor | Kallo, MG | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | CRYSTAL SILICON | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | EXCITATION | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | DEPENDENCE | - |
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