Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

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dc.contributor.authorSun, YPko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorSuh, EKko
dc.contributor.authorLee, HJko
dc.contributor.authorChoi, RJko
dc.contributor.authorHahn, YBko
dc.date.accessioned2013-03-04T20:05:57Z-
dc.date.available2013-03-04T20:05:57Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.84, no.1, pp.49 - 51-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/83940-
dc.description.abstractOptical properties and carrier dynamics of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with graded-In-content were studied by photoluminescence (PL), PL excitation, and time-resolved PL techniques. Two separated InGaN-related peaks were clearly found in PL spectra due to strong phase separation in the well of the graded-In-content InGaN MQWs. The integrated intensity of the main InGaN green emission (similar to510 nm) decreased by only about a factor of 7 with increasing temperature from 10 to 300 K, indicating strong carrier localization and high quantum efficiency. Strong carrier transfer from low-In-content region with weak carrier localization to high-In-content part with strong carrier localization was observed by time-resolved PL. Therefore, we conclude that the effective carrier transfer from weakly to strongly localized states plays an important role to enhance brightness and quantum efficiency in the green-light-emitting InGaN MQWs with graded-In content. (C) 2004 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectPHASE-SEPARATION-
dc.subjectOPTICAL BANDGAP-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectINN-
dc.titleCarrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer-
dc.typeArticle-
dc.identifier.wosid000187717600017-
dc.identifier.scopusid2-s2.0-0942289174-
dc.type.rimsART-
dc.citation.volume84-
dc.citation.issue1-
dc.citation.beginningpage49-
dc.citation.endingpage51-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1637959-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorSun, YP-
dc.contributor.nonIdAuthorSuh, EK-
dc.contributor.nonIdAuthorLee, HJ-
dc.contributor.nonIdAuthorChoi, RJ-
dc.contributor.nonIdAuthorHahn, YB-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHASE-SEPARATION-
dc.subject.keywordPlusOPTICAL BANDGAP-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusINN-
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