Intense blue-white luminescence from carbon-doped silicon-rich silicon oxide

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The effect of carbon doping on the enhancement of visible luminescence from silicon-rich silicon oxide (SRSO), which consists of Si nanoclusters embedded inside a SiO2 matrix, is investigated. C-doped SRSO films were fabricated by electron cyclotron resonance-plasma enhanced chemical vapor deposition method using SiH4, O-2, and CH4 source gases followed by a high-temperature anneal. Intense blue-white visible luminescence, visible to the naked eye under daylight conditions, was observed from the film with a nearly equal amount of C and excess Si (similar to16 at. %) after an anneal at 950 degreesC. Furthermore luminescence could be tuned from 1.8 to 2.5 eV by controlling the C to excess Si ratio, the C content, and the anneal temperature. Taken together with the infrared absorption spectra, these results indicate that the luminescence is attributed to exciton recombination in C-incorporated Si nanoclusters. (C) 2004 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2004-02
Language
English
Article Type
Article
Keywords

POROUS SILICON; SIC/SIO2 INTERFACE; SI NANOCRYSTALS; LIGHT EMISSION; PHOTOLUMINESCENCE; SURFACES

Citation

APPLIED PHYSICS LETTERS, v.84, pp.717 - 719

ISSN
0003-6951
DOI
10.1063/1.1645989
URI
http://hdl.handle.net/10203/83936
Appears in Collection
NT-Journal Papers(저널논문)
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