DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TG | ko |
dc.contributor.author | Whang, CN | ko |
dc.contributor.author | Sun, Y | ko |
dc.contributor.author | Seo, SY | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | Song, JH | ko |
dc.date.accessioned | 2013-03-04T19:59:52Z | - |
dc.date.available | 2013-03-04T19:59:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-03 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3236 - 3242 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83926 | - |
dc.description.abstract | The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7x10(15) cm(-2) prior to anneal at 1000 degreesC is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | VISIBLE PHOTOLUMINESCENCE | - |
dc.subject | THERMODYNAMIC PROPERTIES | - |
dc.subject | FILMS | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | IMPLANTATION | - |
dc.subject | NANOCLUSTERS | - |
dc.subject | TEMPERATURE | - |
dc.subject | SIO2-FILMS | - |
dc.subject | RESONANCE | - |
dc.title | Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation | - |
dc.type | Article | - |
dc.identifier.wosid | 000174182400104 | - |
dc.identifier.scopusid | 2-s2.0-33845412603 | - |
dc.type.rims | ART | - |
dc.citation.volume | 91 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3236 | - |
dc.citation.endingpage | 3242 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Kim, TG | - |
dc.contributor.nonIdAuthor | Whang, CN | - |
dc.contributor.nonIdAuthor | Sun, Y | - |
dc.contributor.nonIdAuthor | Seo, SY | - |
dc.contributor.nonIdAuthor | Song, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | VISIBLE PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | THERMODYNAMIC PROPERTIES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | NANOCLUSTERS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | SIO2-FILMS | - |
dc.subject.keywordPlus | RESONANCE | - |
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