Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

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dc.contributor.authorKim, TGko
dc.contributor.authorWhang, CNko
dc.contributor.authorSun, Yko
dc.contributor.authorSeo, SYko
dc.contributor.authorShin, JungHoonko
dc.contributor.authorSong, JHko
dc.date.accessioned2013-03-04T19:59:52Z-
dc.date.available2013-03-04T19:59:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-03-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3236 - 3242-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/83926-
dc.description.abstractThe effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7x10(15) cm(-2) prior to anneal at 1000 degreesC is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide. (C) 2002 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectAMORPHOUS-SILICON-
dc.subjectVISIBLE PHOTOLUMINESCENCE-
dc.subjectTHERMODYNAMIC PROPERTIES-
dc.subjectFILMS-
dc.subjectCRYSTALLIZATION-
dc.subjectIMPLANTATION-
dc.subjectNANOCLUSTERS-
dc.subjectTEMPERATURE-
dc.subjectSIO2-FILMS-
dc.subjectRESONANCE-
dc.titleControlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation-
dc.typeArticle-
dc.identifier.wosid000174182400104-
dc.identifier.scopusid2-s2.0-33845412603-
dc.type.rimsART-
dc.citation.volume91-
dc.citation.issue5-
dc.citation.beginningpage3236-
dc.citation.endingpage3242-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorKim, TG-
dc.contributor.nonIdAuthorWhang, CN-
dc.contributor.nonIdAuthorSun, Y-
dc.contributor.nonIdAuthorSeo, SY-
dc.contributor.nonIdAuthorSong, JH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusVISIBLE PHOTOLUMINESCENCE-
dc.subject.keywordPlusTHERMODYNAMIC PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusIMPLANTATION-
dc.subject.keywordPlusNANOCLUSTERS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusSIO2-FILMS-
dc.subject.keywordPlusRESONANCE-
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