Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source

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dc.contributor.authorKim J.M.ko
dc.contributor.authorLee Y.T.ko
dc.contributor.authorSong J.D.ko
dc.contributor.authorKim, Jounghoko
dc.date.accessioned2013-03-04T18:42:34Z-
dc.date.available2013-03-04T18:42:34Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-04-
dc.identifier.citationJOURNAL OF CRYSTAL GROWTH, v.265, no.1-2, pp.8 - 13-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10203/83673-
dc.description.abstractLattice-matched InGaAs on (100) InP was grown by molecular beam epitaxy with arsenic dimers (As) at a growth temperature (T.) range of 250-470degreesC. Measurements of double-crystal X-ray diffraction reveal that Deltaa perpendicular to /a(o) of low-temperature-grown (LTG) InGaAs increases from 0.82 x 10(-2) (T-g = 470degreesC) to 4.1 x 10(-2) (T-g = 250degreesC) as T-g decreases. The measurements also indicate that excess arsenics are easily incorporated as antisites. All grown samples show a clear crystalline structure and are strong n-type. When T-g is decreased from 470degreesC to 250degreesC, then according to the Hall measurement the carrier concentration increases from 5.0 x 10(-16) to 2.4 x 10(-18) cm(-3) and according to the time-resolved reflectivity measurement the carrier lifetime decreases from 14.02 to 2.33 ps. Finally, for InGaAs/InP grown at 250degreesC, the incorporation of Be decreases the carrier lifetime to 1.86 ps and the residual n-type carrier concentration to 5.0 x 10(-16) cm(-3). Crystallized InGaAs/lnP with LTG material properties was obtained with a smaller V/III ratio and at higher growth temperature, compared to those with As-4. (C) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectINTERACTION KINETICS-
dc.subjectQUANTUM-WELLS-
dc.subjectSURFACES-
dc.titleElectrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source-
dc.typeArticle-
dc.identifier.wosid000220937000002-
dc.identifier.scopusid2-s2.0-1842422950-
dc.type.rimsART-
dc.citation.volume265-
dc.citation.issue1-2-
dc.citation.beginningpage8-
dc.citation.endingpage13-
dc.citation.publicationnameJOURNAL OF CRYSTAL GROWTH-
dc.identifier.doi10.1016/j.jcrysgro.2004.01.030-
dc.contributor.localauthorKim, Joungho-
dc.contributor.nonIdAuthorKim J.M.-
dc.contributor.nonIdAuthorLee Y.T.-
dc.contributor.nonIdAuthorSong J.D.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthordefects-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthorphosphides-
dc.subject.keywordPlusINTERACTION KINETICS-
dc.subject.keywordPlusQUANTUM-WELLS-
dc.subject.keywordPlusSURFACES-
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