Embedded DRAM (eDRAM) power-energy estimation using signal swing-based analytical model

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 433
  • Download : 0
Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Issue Date
2002-08
Language
English
Article Type
Letter
Keywords

ACCESS TIME; MACRO; CMOS

Citation

IEICE TRANSACTIONS ON ELECTRONICS, v.E85C, no.8, pp.1664 - 1668

ISSN
0916-8524
URI
http://hdl.handle.net/10203/83631
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0