White light-emitting diodes of GaN-based Sr2SiO4 : Eu and the luminescent properties

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We have synthesized a Eu2+-activated Sr2SiO4 yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-02
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.82, no.5, pp.683 - 685

ISSN
0003-6951
DOI
10.1063/1.1544055
URI
http://hdl.handle.net/10203/83445
Appears in Collection
CH-Journal Papers(저널논문)
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