Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO2 superlattice by excimer laser irradiation

Cited 24 time in webofscience Cited 0 time in scopus
  • Hit : 292
  • Download : 207
DC FieldValueLanguage
dc.contributor.authorDaigil Chako
dc.contributor.authorShin, JungHoonko
dc.contributor.authorIn-Hyuk Songko
dc.contributor.authorMin-Koo Hanko
dc.date.accessioned2013-03-04T16:45:14Z-
dc.date.available2013-03-04T16:45:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-02-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.84, pp.1287 - 1289-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/83308-
dc.description.abstractThe effect of excimer laser annealing on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/SiO2 superlattice is investigated. An amorphous Si/SiO2 superlattice consisting of 20 periods of 2 nm thin Si layers and 5 nm thin SiO2 layers was deposited on Si using electron cyclotron resonance plasma-enhanced chemical vapor deposition. Excimer laser annealing alone did not result in any nc-Si luminescence even at an energy density sufficient to melt the Si layers. However, if the nc-Si is preformed by a thermal anneal, subsequent excimer laser annealing will result in a threefold increase of the nc-Si luminescence intensity. The temperature dependence of the nc-Si luminescence spectrum, lifetime, and intensity indicates that excimer laser annealing activates luminescent nc-Si by removing defects and amorphous regions in thermally crystallized Si layers without significant changes in the size or shape of nc-Si. (C) 2004 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectAMORPHOUS-SILICON-
dc.subjectCRYSTALLIZATION-
dc.subjectFILMS-
dc.subjectELECTROLUMINESCENCE-
dc.titleEnhanced formation of luminescent nanocrystal Si embedded in Si/SiO2 superlattice by excimer laser irradiation-
dc.typeArticle-
dc.identifier.wosid000189075000019-
dc.identifier.scopusid2-s2.0-1642381204-
dc.type.rimsART-
dc.citation.volume84-
dc.citation.beginningpage1287-
dc.citation.endingpage1289-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1650037-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorDaigil Cha-
dc.contributor.nonIdAuthorIn-Hyuk Song-
dc.contributor.nonIdAuthorMin-Koo Han-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusELECTROLUMINESCENCE-
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 24 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0