DC Field | Value | Language |
---|---|---|
dc.contributor.author | Daigil Cha | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | In-Hyuk Song | ko |
dc.contributor.author | Min-Koo Han | ko |
dc.date.accessioned | 2013-03-04T16:45:14Z | - |
dc.date.available | 2013-03-04T16:45:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.84, pp.1287 - 1289 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83308 | - |
dc.description.abstract | The effect of excimer laser annealing on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/SiO2 superlattice is investigated. An amorphous Si/SiO2 superlattice consisting of 20 periods of 2 nm thin Si layers and 5 nm thin SiO2 layers was deposited on Si using electron cyclotron resonance plasma-enhanced chemical vapor deposition. Excimer laser annealing alone did not result in any nc-Si luminescence even at an energy density sufficient to melt the Si layers. However, if the nc-Si is preformed by a thermal anneal, subsequent excimer laser annealing will result in a threefold increase of the nc-Si luminescence intensity. The temperature dependence of the nc-Si luminescence spectrum, lifetime, and intensity indicates that excimer laser annealing activates luminescent nc-Si by removing defects and amorphous regions in thermally crystallized Si layers without significant changes in the size or shape of nc-Si. (C) 2004 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | FILMS | - |
dc.subject | ELECTROLUMINESCENCE | - |
dc.title | Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO2 superlattice by excimer laser irradiation | - |
dc.type | Article | - |
dc.identifier.wosid | 000189075000019 | - |
dc.identifier.scopusid | 2-s2.0-1642381204 | - |
dc.type.rims | ART | - |
dc.citation.volume | 84 | - |
dc.citation.beginningpage | 1287 | - |
dc.citation.endingpage | 1289 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1650037 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Daigil Cha | - |
dc.contributor.nonIdAuthor | In-Hyuk Song | - |
dc.contributor.nonIdAuthor | Min-Koo Han | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
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