DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ang, CH | ko |
dc.contributor.author | Lek, CM | ko |
dc.contributor.author | Tan, SS | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Chen, TP | ko |
dc.contributor.author | Lin, WH | ko |
dc.contributor.author | Zhen, JZ | ko |
dc.date.accessioned | 2013-03-04T13:50:56Z | - |
dc.date.available | 2013-03-04T13:50:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82843 | - |
dc.description.abstract | The behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration. | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | INTERFACE | - |
dc.subject | DIFFUSION | - |
dc.subject | TRAPS | - |
dc.subject | OXIDE | - |
dc.subject | SIO2 | - |
dc.title | Negative bias temperature instability on plasma-nitrided silicon dioxide film | - |
dc.type | Article | - |
dc.identifier.wosid | 000176444200006 | - |
dc.identifier.scopusid | 2-s2.0-0037088521 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 3B | - |
dc.citation.beginningpage | 314 | - |
dc.citation.endingpage | 316 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.identifier.doi | 10.1143/JJAP.41.L314 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Lek, CM | - |
dc.contributor.nonIdAuthor | Tan, SS | - |
dc.contributor.nonIdAuthor | Chen, TP | - |
dc.contributor.nonIdAuthor | Lin, WH | - |
dc.contributor.nonIdAuthor | Zhen, JZ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | negative-bias-temperature-instability | - |
dc.subject.keywordAuthor | thin oxide | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | MOS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | TRAPS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SIO2 | - |
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