Negative bias temperature instability on plasma-nitrided silicon dioxide film

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dc.contributor.authorAng, CHko
dc.contributor.authorLek, CMko
dc.contributor.authorTan, SSko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorChen, TPko
dc.contributor.authorLin, WHko
dc.contributor.authorZhen, JZko
dc.date.accessioned2013-03-04T13:50:56Z-
dc.date.available2013-03-04T13:50:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-03-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/82843-
dc.description.abstractThe behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectINTERFACE-
dc.subjectDIFFUSION-
dc.subjectTRAPS-
dc.subjectOXIDE-
dc.subjectSIO2-
dc.titleNegative bias temperature instability on plasma-nitrided silicon dioxide film-
dc.typeArticle-
dc.identifier.wosid000176444200006-
dc.identifier.scopusid2-s2.0-0037088521-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue3B-
dc.citation.beginningpage314-
dc.citation.endingpage316-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.identifier.doi10.1143/JJAP.41.L314-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLek, CM-
dc.contributor.nonIdAuthorTan, SS-
dc.contributor.nonIdAuthorChen, TP-
dc.contributor.nonIdAuthorLin, WH-
dc.contributor.nonIdAuthorZhen, JZ-
dc.type.journalArticleArticle-
dc.subject.keywordAuthornegative-bias-temperature-instability-
dc.subject.keywordAuthorthin oxide-
dc.subject.keywordAuthorinterface trap-
dc.subject.keywordAuthorMOS-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusTRAPS-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusSIO2-
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