DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mebratu, GK | ko |
dc.contributor.author | Kim, MJ | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-04T13:44:34Z | - |
dc.date.available | 2013-03-04T13:44:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-11 | - |
dc.identifier.citation | JOURNAL OF NON-CRYSTALLINE SOLIDS, v.347, pp.279 - 284 | - |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82824 | - |
dc.description.abstract | Nd3+ photoluminescence from Nd doped, hydrogenated amorphous silicon alloyed with carbon (a-Si:H:C) is investigated. Nd-doped, a-Si:H:C films were deposited using electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and CH4 with concurrent sputtering of Nd. Clear Nd3+ luminescence peaks can be observed when excited with 488 nm light, indicating that Nd3+ ions in a-Si:H:C are excited via carriers generated in the a-Si:H:C. The energetics of Nd-doped a-Si:H:C rule out defect-related Auger excitation via mid-gap states. Based on the temperature and pump power dependence of Nd3+ and intrinsic a-Si:H:C photoluminescence intensities, we identify excitation via Nd-related defects with a strong coupling to Nd3+ as a possible excitation mechanism for Nd in a-Si:H:C. (C) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ENERGY-TRANSFER | - |
dc.subject | LUMINESCENCE | - |
dc.subject | ER3+ | - |
dc.subject | SI | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | DEEXCITATION | - |
dc.subject | ENHANCEMENT | - |
dc.subject | IONS | - |
dc.title | Nd3+ photoluminescence and its implication on the excitation mechanisms of Nd3+ in Nd doped hydrogenated amorphous silicon alloyed with carbon | - |
dc.type | Article | - |
dc.identifier.wosid | 000225555600039 | - |
dc.identifier.scopusid | 2-s2.0-9644259116 | - |
dc.type.rims | ART | - |
dc.citation.volume | 347 | - |
dc.citation.beginningpage | 279 | - |
dc.citation.endingpage | 284 | - |
dc.citation.publicationname | JOURNAL OF NON-CRYSTALLINE SOLIDS | - |
dc.identifier.doi | 10.1016/j.jnoncrysol.2004.09.016 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Mebratu, GK | - |
dc.contributor.nonIdAuthor | Kim, MJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ENERGY-TRANSFER | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | ER3+ | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DEEXCITATION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | IONS | - |
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