DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Li, MF | ko |
dc.contributor.author | Ding, SJ | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Yu, MB | ko |
dc.contributor.author | Chin, A | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-04T13:28:13Z | - |
dc.date.available | 2013-03-04T13:28:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82781 | - |
dc.description.abstract | It is demonstrated that the voltage coefficients of capacitance (VCC) in high-k, metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-k and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fF mum(2) and quadratic VCC of only 14 ppm/V-2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm degreesC) as well as low leakage current of less than 10 nA/cm(2) up to 4 V at 125 degreesC. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000222905100008 | - |
dc.identifier.scopusid | 2-s2.0-3943060190 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 538 | - |
dc.citation.endingpage | 540 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2004.832785 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Ding, SJ | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Yu, MB | - |
dc.contributor.nonIdAuthor | Chin, A | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | analog/mixed-signal ICs | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | dielectric | - |
dc.subject.keywordAuthor | high-kappa/SiO2 stack | - |
dc.subject.keywordAuthor | metal-insulator-metal (MINI) capacitor | - |
dc.subject.keywordAuthor | voltage coefficient of capacitance (VCC) | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.