Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

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dc.contributor.authorKim, SJko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorLi, MFko
dc.contributor.authorDing, SJko
dc.contributor.authorZhu, CXko
dc.contributor.authorYu, MBko
dc.contributor.authorChin, Ako
dc.contributor.authorKwong, DLko
dc.date.accessioned2013-03-04T13:28:13Z-
dc.date.available2013-03-04T13:28:13Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-08-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/82781-
dc.description.abstractIt is demonstrated that the voltage coefficients of capacitance (VCC) in high-k, metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-k and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fF mum(2) and quadratic VCC of only 14 ppm/V-2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm degreesC) as well as low leakage current of less than 10 nA/cm(2) up to 4 V at 125 degreesC.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleImprovement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric-
dc.typeArticle-
dc.identifier.wosid000222905100008-
dc.identifier.scopusid2-s2.0-3943060190-
dc.type.rimsART-
dc.citation.volume25-
dc.citation.issue8-
dc.citation.beginningpage538-
dc.citation.endingpage540-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2004.832785-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorDing, SJ-
dc.contributor.nonIdAuthorZhu, CX-
dc.contributor.nonIdAuthorYu, MB-
dc.contributor.nonIdAuthorChin, A-
dc.contributor.nonIdAuthorKwong, DL-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoranalog/mixed-signal ICs-
dc.subject.keywordAuthorhigh-kappa-
dc.subject.keywordAuthordielectric-
dc.subject.keywordAuthorhigh-kappa/SiO2 stack-
dc.subject.keywordAuthormetal-insulator-metal (MINI) capacitor-
dc.subject.keywordAuthorvoltage coefficient of capacitance (VCC)-
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