Spectroscopic ellipsometry analysis for investigation of the modification of thin film p-a-Si1-xCx : H after ultraviolet treatment in an Argon ambient
We have investigated the optical transitions for thin film p-type hydrogenated amorphous silicon-carbon alloy (p-a-Si1-xCx:H) after ultraviolet (UV) treatment in an Ar ambient (UTA) by using ex situ phase modulated spectroscopic ellipsometry. We fitted the pseudo-dielectric functions of p-a-Si1-xCx:H by using the Tauc-Lorentz parameterization. We found that the UTA process induced structural modification of p-a-Si1-xCx:H and hydrogen emission. We have improved the conversion efficiency of an amorphous silicon (a-Si:H) based solar cell from 8.16% to 9.43% via in situ UTA of the p-a-Si1-xCx:H window layer. (C) 2004 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE SA
- Issue Date
- 2004-05
- Language
- English
- Article Type
- Article; Proceedings Paper
- Keywords
HYDROGENATED AMORPHOUS-SILICON; PHOTOCHEMICAL VAPOR-DEPOSITION; SOLAR-CELL; DILUTION; PLASMA
- Citation
THIN SOLID FILMS, v.455, pp.482 - 485
- ISSN
- 0040-6090
- Appears in Collection
- EE-Journal Papers(저널논문)
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