DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, CY | ko |
dc.contributor.author | Kim, YS | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T13:08:25Z | - |
dc.date.available | 2013-03-04T13:08:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.69, no.8, pp.085208 - 085208 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82734 | - |
dc.description.abstract | We perform first-principles pseudopotential calculations to investigate the atomic structure and energetics of various defects consisting of B and P impurities and the effect of P on B diffusion in Si. In the equilibrium case, we find that a B-P pair is energetically most stable when P is positioned at a second-neighbor site of B. When excess Si interstitials are generated by implantation, B and P impurities tend to form I-s-B-P complexes with self-interstitials (I-s), where P still prefers to a second-neighbor site of B, particularly for high donor concentrations. Using the nudged elastic band method, we examine the diffusion of B and its energy barrier in the presence of P. We find that the diffusion pathways of B are similar to those reported for the I-s-B pair without P; however, the migration energy for B diffusion from the I-s-B-P complex increases by about 0.2 eV. The increase of the activation energy and the formation of the B-P pair acting as a trap for B diffusion provide a clue for understanding the suppression of B diffusion observed in Si predoped heavily with donor impurities. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Atomic structure of B-related defects and B diffusion in Si predoped with P impurities | - |
dc.type | Article | - |
dc.identifier.wosid | 000220185100045 | - |
dc.identifier.scopusid | 2-s2.0-1842564083 | - |
dc.type.rims | ART | - |
dc.citation.volume | 69 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 085208 | - |
dc.citation.endingpage | 085208 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Moon, CY | - |
dc.contributor.nonIdAuthor | Kim, YS | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject.keywordPlus | BORON-DIFFUSION | - |
dc.subject.keywordPlus | ANOMALOUS DIFFUSION | - |
dc.subject.keywordPlus | DOPANT DIFFUSION | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PHOSPHORUS | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | 1ST-PRINCIPLES | - |
dc.subject.keywordPlus | CODIFFUSION | - |
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