DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Jeung Ku | ko |
dc.contributor.author | Musgrave, CB | ko |
dc.date.accessioned | 2013-03-04T10:03:10Z | - |
dc.date.available | 2013-03-04T10:03:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-09 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.12, no.3, pp.258 - 264 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82375 | - |
dc.description.abstract | The scanning tunnelling microscope (STM) has been used to modify surfaces with atomic resolution and has consequently been proposed as a tool for nanotechnology. Here we examine a process for deposition of (100) diamond under a localized electric field. We use ab initio quantum-chemistry techniques to investigate the effect of an electric field on the chemical vapour deposition of (100) diamond. The field approximates the field of an STM by using a point charge placed 15 Angstrom above the surface to create a 0.64 V Angstrom (-1) field at the dimer. Our study explores the effect of this electric field on CH(3) adsorption, and the dimer-opening and ring-closing steps of the Brenner-Garrison diamond CVD mechanism. CH(3) adsorption is exothermic by 84 kcal mol(-1) and is not affected by the electric field. The dimer-opening and ring-closing steps are sensitive to the applied field: the dimer-opening barrier is reduced from 9.6 to 6.0 kcal mol(-1), while the barrier of the ring-closing step is reduced from 13.6 to 11.0 kcal mol(-1). Our results indicate that the rate of CVD diamond growth can be enhanced by the application of an electric field, in agreement with experiment. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SCANNING TUNNELING MICROSCOPE | - |
dc.subject | AB-INITIO | - |
dc.subject | HYDROGEN ABSTRACTION | - |
dc.subject | SURFACE | - |
dc.subject | GROWTH | - |
dc.subject | SIMULATIONS | - |
dc.subject | ATOMS | - |
dc.subject | CVD | - |
dc.title | The effect of an electric field on the chemical vapour deposition of (100) diamond | - |
dc.type | Article | - |
dc.identifier.wosid | 000171454100012 | - |
dc.identifier.scopusid | 2-s2.0-0035442315 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 258 | - |
dc.citation.endingpage | 264 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/12/3/310 | - |
dc.contributor.localauthor | Kang, Jeung Ku | - |
dc.contributor.nonIdAuthor | Musgrave, CB | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SCANNING TUNNELING MICROSCOPE | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | HYDROGEN ABSTRACTION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SIMULATIONS | - |
dc.subject.keywordPlus | ATOMS | - |
dc.subject.keywordPlus | CVD | - |
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