DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee C.-S. | ko |
dc.contributor.author | Han C.-H. | ko |
dc.date.accessioned | 2013-03-04T09:06:32Z | - |
dc.date.available | 2013-03-04T09:06:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | SENSORS AND ACTUATORS A-PHYSICAL, v.1997-08-01, pp.739 - 743 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82274 | - |
dc.description.abstract | A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) has been developed. In this method, oxidation process determines the gap distance. Thus, it is relatively easy to form electrode gaps with dimensions less than I pm. Also, the process allows for good uniformity and reproducibility in controlling the gap distance. And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 2560 Angstrom is as low as 4.0 V, which is the lowest turn-on voltage among lateral poly-Si FEDs ever reported. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP): application to lateral field emission device (FED) | - |
dc.type | Article | - |
dc.identifier.wosid | 000176297000103 | - |
dc.identifier.scopusid | 2-s2.0-18544408683 | - |
dc.type.rims | ART | - |
dc.citation.volume | 1997-08-01 | - |
dc.citation.beginningpage | 739 | - |
dc.citation.endingpage | 743 | - |
dc.citation.publicationname | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.identifier.doi | 10.1016/S0924-4247(02)00014-6 | - |
dc.contributor.localauthor | Han C.-H. | - |
dc.contributor.nonIdAuthor | Lee C.-S. | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | chemical-mechanical polishing | - |
dc.subject.keywordAuthor | poly-silicon | - |
dc.subject.keywordAuthor | gap | - |
dc.subject.keywordAuthor | field emission device | - |
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