A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP): application to lateral field emission device (FED)

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A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) has been developed. In this method, oxidation process determines the gap distance. Thus, it is relatively easy to form electrode gaps with dimensions less than I pm. Also, the process allows for good uniformity and reproducibility in controlling the gap distance. And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 2560 Angstrom is as low as 4.0 V, which is the lowest turn-on voltage among lateral poly-Si FEDs ever reported. (C) 2002 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2002
Language
English
Article Type
Article; Proceedings Paper
Citation

SENSORS AND ACTUATORS A-PHYSICAL, v.1997-08-01, pp.739 - 743

ISSN
0924-4247
DOI
10.1016/S0924-4247(02)00014-6
URI
http://hdl.handle.net/10203/82274
Appears in Collection
RIMS Journal Papers
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