DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zeng, YP | ko |
dc.contributor.author | Lu, YF | ko |
dc.contributor.author | Shen, ZX | ko |
dc.contributor.author | Sun, WX | ko |
dc.contributor.author | Yu, T | ko |
dc.contributor.author | Liu, L | ko |
dc.contributor.author | Zeng, JN | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Poon, CH | ko |
dc.date.accessioned | 2013-03-04T08:10:03Z | - |
dc.date.available | 2013-03-04T08:10:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-05 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.15, no.5, pp.658 - 662 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82112 | - |
dc.description.abstract | Raman spectroscopy was used to investigate excimer laser annealing and thickness determination of amorphous silicon (a-Si) layers which are less than 20 nm thick. The a-Si layers were produced on silicon (Si) substrates using Si+ ion implantation with an energy of 10 keV and a dose of 1 x 10(15) cm(-2). Excimer laser annealing was applied to re-crystallize the a-Si layers. The dependence of re-crystallization on laser fluence was investigated using Raman spectroscopy. A threshold laser fluence of 0.4 J cm(-2) was required to re-crystallize the a-Si layers. In Raman spectroscopy, the Raman intensity shows a periodical variation with a period of 90degrees as a function of the angle between the Si orientation and the laser polarization. Based on this phenomenon, a method to determine nanoscale a-Si film thickness was proposed in two ways. One way was carried out without sample rotation to determine the a-Si thickness provided that the reference c-Si and a-Si/c-Si samples are in the same crystal orientation. The other way was carried out with sample rotation to determine the a-Si thickness without knowing the crystal orientation beforehand. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | POLY-SI TFTS | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | FILMS | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | FABRICATION | - |
dc.subject | GE | - |
dc.title | Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon | - |
dc.type | Article | - |
dc.identifier.wosid | 000221679800044 | - |
dc.identifier.scopusid | 2-s2.0-2642513125 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 658 | - |
dc.citation.endingpage | 662 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/15/5/043 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zeng, YP | - |
dc.contributor.nonIdAuthor | Lu, YF | - |
dc.contributor.nonIdAuthor | Shen, ZX | - |
dc.contributor.nonIdAuthor | Sun, WX | - |
dc.contributor.nonIdAuthor | Yu, T | - |
dc.contributor.nonIdAuthor | Liu, L | - |
dc.contributor.nonIdAuthor | Zeng, JN | - |
dc.contributor.nonIdAuthor | Poon, CH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | POLY-SI TFTS | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | GE | - |
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