DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, EC | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T08:01:32Z | - |
dc.date.available | 2013-03-04T08:01:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.70, no.11, pp.115210 - 115210 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82090 | - |
dc.description.abstract | Based on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of compensating interstitials is severely suppressed, and the acceptor solubility is greatly enhanced by forming H-acceptor complexes. The H atoms can be easily dissociated from these defect complexes at relatively low annealing temperatures, and thus low-resistivity p-type ZnO is achievable with dopants different from group-V elements. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | ELECTRONIC-STRUCTURE CALCULATIONS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | THIN-FILMS | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | DEFECTS | - |
dc.subject | GAN | - |
dc.subject | PSEUDOPOTENTIALS | - |
dc.subject | DEPOSITION | - |
dc.subject | HYDROGEN | - |
dc.subject | CONDUCTION | - |
dc.title | Possible p-type doping with group-I elements in ZnO | - |
dc.type | Article | - |
dc.identifier.wosid | 000224209500043 | - |
dc.identifier.scopusid | 2-s2.0-19744381571 | - |
dc.type.rims | ART | - |
dc.citation.volume | 70 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 115210 | - |
dc.citation.endingpage | 115210 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.70.115210 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Lee, EC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE CALCULATIONS | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | CONDUCTION | - |
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