DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Park, HL | ko |
dc.date.accessioned | 2013-03-04T07:45:32Z | - |
dc.date.available | 2013-03-04T07:45:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-12 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.749 - 754 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82047 | - |
dc.description.abstract | Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structure in CdxZn1-xTe epitaxial layers grown on (001)GaAs substrates. The SADP showed two sets of superstructure reflections with symmetrical intensity, and the high-resolution TEM (HRTEM) image showed doublet periodicity in the contrast of the (111) lattice planes. The results of the SADP and HRTEM measurements showed that CuPt-type ordered structures with two different variants were observed in the CdxZn1-xTe epitaxial layers. The formation of a CuPt-type ordered structure in the CdxZn1-xTe epitaxial layer might originate from the minimization of strain relaxation energy in the reconstructed GaAs(001) surface. A possible atomic crystal structure for the CdxZn1-xTe epitaxial layer is presented based on the HRTEM results. These results provide important information on the microstructural properties for enhancing device efficiencies of operating at the blue-green region of the spectrum. (C) 2001 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | PHASE EPITAXY | - |
dc.subject | ALLOYS | - |
dc.subject | LAYERS | - |
dc.subject | DISORDER | - |
dc.subject | (111)B | - |
dc.subject | GAINP | - |
dc.title | Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000171517200017 | - |
dc.identifier.scopusid | 2-s2.0-0035546552 | - |
dc.type.rims | ART | - |
dc.citation.volume | 233 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 749 | - |
dc.citation.endingpage | 754 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Park, HL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | characterization | - |
dc.subject.keywordAuthor | crystal structure | - |
dc.subject.keywordAuthor | vapor phase epitaxy | - |
dc.subject.keywordAuthor | cadmium compounds | - |
dc.subject.keywordAuthor | semiconducting II-VI materials | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | PHASE EPITAXY | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | DISORDER | - |
dc.subject.keywordPlus | (111)B | - |
dc.subject.keywordPlus | GAINP | - |
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