Anomalous temperature dependence of optical emission in visible-light-emitting amorphous silicon quantum dots

Cited 40 time in webofscience Cited 38 time in scopus
  • Hit : 312
  • Download : 0
We have investigated optical properties of amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride grown on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The photoluminescence (PL) emission colors of red, orange, and blue were shown for the a-Si QDs with average dot sizes of 5.8, 2.4, and 1.3 nm, respectively. The increase in the PL peak energy with decreasing QD size was attributed to the quantum confinement effect in a-Si QDs. An anomalous temperature dependence of the PL intensity and PL peak energy was observed for a-Si QDs. The visible-light PL emission from a-Si QDs is most efficient at near room temperature, and the PL spectral shape and peak energy are almost independent of temperature, which are most favorable for light-emitting device applications. From time-resolved PL experiments, an enhancement of phonon-assisted indirect radiative recombination was proposed to explain the anomalous temperature dependence. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-10
Language
English
Article Type
Article
Keywords

SI; RECOMBINATION; NANOCRYSTALS; DIODES

Citation

APPLIED PHYSICS LETTERS, v.83, pp.2901 - 2903

ISSN
0003-6951
DOI
10.1063/1.1613993
URI
http://hdl.handle.net/10203/82003
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 40 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0