Direct electron-beam writing with high aspect ratio for fabricating ion-beam lithography mask

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An electron-beam lithography techniqe has been used to fabricate an ion-beam mask having a narrow pattern with a high aspect ratio for the application of ion-beam lithography. A conventional 40 kV electron-beam microscope was used for direct electron-beam writing, and was connected to a design computer by digital-to-analog converter. Polymethylmethacrylate with a thickness of 400 nm was used as a resist material. To achieve high aspect ratio and better interface quality, we used a multiple-pass electron-beam writing technique with a special design. As a result, we could obtain an electron-beam writing pattern with a linewidth of about 56 nm and an aspect ratio of about 1:7.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2003-02
Language
English
Article Type
Article; Proceedings Paper
Keywords

X-RAY MASK; SCALE

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S199 - S201

ISSN
0374-4884
URI
http://hdl.handle.net/10203/82002
Appears in Collection
PH-Journal Papers(저널논문)
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