Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy

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Single-crystalline GaN nanorods are formed on a sapphire substrate by hydride vapor phase epitaxy (HVPE). Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and cathodoluminescence (CL) techniques. The high density of straight and well-aligned nanorods with a diameter of 80-120 nm formed uniformly over the entire 2 in. sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the formed GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. We observed a higher CL peak position of individual GaN nanorods than that of bulk GaN as well as a blueshift of CL peak position with decreasing the diameter of GaN nanorods, which are attributed to quantum confinement effect in one-dimensional GaN nanorods. We demonstrate that the well-aligned, single-crystalline GaN nanorods with high density, high crystal quality, and good spatial uniformity are formed by the HVPE method. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-09
Language
English
Article Type
Article
Keywords

GALLIUM NITRIDE NANOWIRES; OPTICAL-PROPERTIES; NANOSTRUCTURES; GAAS

Citation

APPLIED PHYSICS LETTERS, v.81, no.12, pp.2193 - 2195

ISSN
0003-6951
DOI
10.1063/1.1507617
URI
http://hdl.handle.net/10203/81987
Appears in Collection
PH-Journal Papers(저널논문)
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