Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Cited 19 time in webofscience Cited 22 time in scopus
  • Hit : 397
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorKim SJko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorLi MFko
dc.contributor.authorZhu CXko
dc.contributor.authorChin Ako
dc.contributor.authorKwong DLko
dc.date.accessioned2013-03-04T04:15:15Z-
dc.date.available2013-03-04T04:15:15Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-07-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/81864-
dc.description.abstractA high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/mum(2) with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectDIELECTRICS-
dc.titleLanthanide (Tb)-doped HfO2 for high-density MIM capacitors-
dc.typeArticle-
dc.identifier.wosid000184454900008-
dc.identifier.scopusid2-s2.0-0042388021-
dc.type.rimsART-
dc.citation.volume24-
dc.citation.issue7-
dc.citation.beginningpage442-
dc.citation.endingpage444-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2003.814024-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKim SJ-
dc.contributor.nonIdAuthorLi MF-
dc.contributor.nonIdAuthorZhu CX-
dc.contributor.nonIdAuthorChin A-
dc.contributor.nonIdAuthorKwong DL-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcapacitance density-
dc.subject.keywordAuthorco-sputtering-
dc.subject.keywordAuthorHfO2-
dc.subject.keywordAuthorlanthanide-
dc.subject.keywordAuthormetal-insulator-metal (MIM) capacitor-
dc.subject.keywordAuthorvoltage coefficient of capacitor (VCC)-
dc.subject.keywordPlusDIELECTRICS-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 19 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0