Electron-hole cotunneling effect in coupled single-electron transistors

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dc.contributor.authorShin, Mincheolko
dc.contributor.authorKim, GHko
dc.date.accessioned2013-03-04T03:08:11Z-
dc.date.available2013-03-04T03:08:11Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-12-
dc.identifier.citationPHYSICAL REVIEW B, v.66, pp.226 - 240-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10203/81665-
dc.description.abstractWe have found theoretically that parallel coupled single-electron transistors undergo a unique crossover from a cotunneling-only state to a predominantly sequential-tunneling state. As a result of the competition between the cotunneling and the sequential tunneling in the course of the crossover, a current dip instead of the usual current peak is observed.-
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.subjectSMALL TUNNEL-JUNCTIONS-
dc.subjectTRANSPORT-
dc.subjectDEVICES-
dc.subjectARRAYS-
dc.subjectPAIRS-
dc.titleElectron-hole cotunneling effect in coupled single-electron transistors-
dc.typeArticle-
dc.identifier.wosid000180279400021-
dc.identifier.scopusid2-s2.0-0037115984-
dc.type.rimsART-
dc.citation.volume66-
dc.citation.beginningpage226-
dc.citation.endingpage240-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorKim, GH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSMALL TUNNEL-JUNCTIONS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusPAIRS-
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