High-Q poly-to-poly capacitor for RF integrated circuits
A very high-Q poly-to-poly capacitor structure is proposed and measurement results are presented. The poly-to-poly capacitor is designed using a conventional 0.35 mum CMOS process. By optimising the design a Q-factor of > 120 is obtained at 2GHz.
- Publisher
- IEE-INST ELEC ENG
- Issue Date
- 2001-01
- Language
- English
- Article Type
- Article
- Keywords
TECHNOLOGY
- Citation
ELECTRONICS LETTERS, v.37, no.1, pp.25 - 26
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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