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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Dry thermal oxidation of a graded SiGe layer

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dc.contributor.authorLim, YSko
dc.contributor.authorJeong, JSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, HSko
dc.contributor.authorShon, HKko
dc.contributor.authorKim, HKko
dc.contributor.authorMoon, DWko
dc.date.accessioned2013-03-04T01:36:42Z-
dc.date.available2013-03-04T01:36:42Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.79, no.22, pp.3606 - 3608-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/81339-
dc.description.abstractA method for the dry thermal oxidation of a strained SiGe layer is proposed. By oxidation of a graded Si1-xGex layer, the effect of Ge pileup was significantly reduced and the undesirable strain relaxation by defect formation is prohibited. After oxidation, the oxidized SiGe layer was homogenized by postannealing process, and thereby a SiO2/SiGe interface with good structural properties was obtained. During postannealing, the homogenization was significantly enhanced by strain-induced diffusion, and it was clearly proved by the uphill diffusion. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures. (C) 2001 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectOZONE-INDUCED OXIDATION-
dc.subjectSILICON-GERMANIUM-
dc.subjectHETEROSTRUCTURES-
dc.subjectBEHAVIOR-
dc.subjectSI1-XGEX-
dc.subjectOXIDES-
dc.subjectALLOY-
dc.titleDry thermal oxidation of a graded SiGe layer-
dc.typeArticle-
dc.identifier.wosid000172204400016-
dc.identifier.scopusid2-s2.0-0035956159-
dc.type.rimsART-
dc.citation.volume79-
dc.citation.issue22-
dc.citation.beginningpage3606-
dc.citation.endingpage3608-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1415373-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorLim, YS-
dc.contributor.nonIdAuthorJeong, JS-
dc.contributor.nonIdAuthorKim, HS-
dc.contributor.nonIdAuthorShon, HK-
dc.contributor.nonIdAuthorKim, HK-
dc.contributor.nonIdAuthorMoon, DW-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusOZONE-INDUCED OXIDATION-
dc.subject.keywordPlusSILICON-GERMANIUM-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusSI1-XGEX-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordPlusALLOY-
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