INTERFACE-ROUGHNESS SCATTERING; SILICON INVERSION-LAYERS; TWO-DIMENSIONAL SYSTEMS; TEMPERATURE-DEPENDENCE; INSULATOR-TRANSITION; IMPURITY-SCATTERING; SCALING THEORY; ELECTRON-GAS; V COMPOUNDS; SI-MOSFET
PHYSICAL REVIEW B, v.70, no.15
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.