Electronic properties of Gd@C-82 metallofullerene peapods: (Gd @ C-82)(n)@SWNTs

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dc.contributor.authorOkazaki, Tko
dc.contributor.authorShimada, Tko
dc.contributor.authorSuenaga, Kko
dc.contributor.authorOhno, Yko
dc.contributor.authorMizutani, Tko
dc.contributor.authorLee, Jhinhwanko
dc.contributor.authorKuk, Yko
dc.contributor.authorShinohara, Hko
dc.date.accessioned2013-03-04T00:31:20Z-
dc.date.available2013-03-04T00:31:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-03-
dc.identifier.citationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.76, pp.475 - 478-
dc.identifier.issn0947-8396-
dc.identifier.urihttp://hdl.handle.net/10203/81091-
dc.description.abstractElectronic properties of Gd@C-82 metallofullerene peapods, (Gd@C-82), @SWNTs, were investigated by electron energy-loss spectroscopy (EELS), scanning tunneling microscopy and spectroscopy (STM/STS), and field-effect transistor (FET) transport measurements. The results indicate that the electronic structure of Gd@C-82 metallofullerene peapods is completely different from that of intact single-walled nanotubes (SWNTs). For example, Gd@C-82-peapod-FETs show ambipolar behavior which is not observed in the empty SWNT-FETs under our experimental conditions. Furthermore, in semiconducting nanotubes the band gap can be varied from similar to0.5 to similar to0.1 eV using inserted Gd@C-82 endohedral metallofullerenes with a spatial periodicity of 1.1 to 8.0 nm, depending on the density of the fullerenes. The present findings suggest that metallofullerene peapods may point the way toward novel electronic devices.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectWALLED CARBON NANOTUBES-
dc.subjectSINGLE-WALL-
dc.subjectENCAPSULATED C-60-
dc.subjectFULLERENES-
dc.subjectEELS-
dc.titleElectronic properties of Gd@C-82 metallofullerene peapods: (Gd @ C-82)(n)@SWNTs-
dc.typeArticle-
dc.identifier.wosid000181805800006-
dc.identifier.scopusid2-s2.0-0037356239-
dc.type.rimsART-
dc.citation.volume76-
dc.citation.beginningpage475-
dc.citation.endingpage478-
dc.citation.publicationnameAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.identifier.doi10.1007/s00339-002-2039-7-
dc.contributor.localauthorLee, Jhinhwan-
dc.contributor.nonIdAuthorOkazaki, T-
dc.contributor.nonIdAuthorShimada, T-
dc.contributor.nonIdAuthorSuenaga, K-
dc.contributor.nonIdAuthorOhno, Y-
dc.contributor.nonIdAuthorMizutani, T-
dc.contributor.nonIdAuthorKuk, Y-
dc.contributor.nonIdAuthorShinohara, H-
dc.type.journalArticleArticle-
dc.subject.keywordPlusWALLED CARBON NANOTUBES-
dc.subject.keywordPlusSINGLE-WALL-
dc.subject.keywordPlusENCAPSULATED C-60-
dc.subject.keywordPlusFULLERENES-
dc.subject.keywordPlusEELS-
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