Rare earth doping of silicon-rich silicon oxide (SRSO) and its application for optoelectronic are investigated. Er, Nd. and Pr doped SRSO thin films Were prepared by electron cyclotron resonance enhanced chemical vapor deposition with co-sputtering of target. For the Er-doped SRSO film, we find that by using Si nanoclusters. much of the problems facing Er-doped bulk Si call be solved such that an efficient Er3+ luminescence at room temperature cim be obtained with very little temperature quenching. Detailed analysis of time-resolved measurement of the de-excitation process of Er shows, however, that a strong coupling does not lead to carrier-mediated quenching of Er3+ luminescence, as is the case with Er-doped bulk Si. Excitation power dependence of Er3+ luminescence indicates that population inversion of Er-doped bulk Si. Excitation power dependence Luminescence properties of Nd-doped SRSO is similar to Er-doped SRSO. but the temperature dependence of Nd3+ luminescence intensity is different from that of Er3+ luminescence, an effect which we ascribe to its higher transition energy. In contrast, no luminescence could be observed from Pr-doped SRSO. Fabrication and operation of waveguides using Fr-doped SRSO thin films were also demonstrated.