DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hu, H | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Yu, XF | ko |
dc.contributor.author | Chin, A | ko |
dc.contributor.author | Li, MF | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Kwong, DL | ko |
dc.contributor.author | Foo, PD | ko |
dc.contributor.author | Yu, MB | ko |
dc.contributor.author | Liu, XY | ko |
dc.contributor.author | Winkler, J | ko |
dc.date.accessioned | 2013-03-03T20:28:51Z | - |
dc.date.available | 2013-03-03T20:28:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-02 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/80305 | - |
dc.description.abstract | The metal-insulator-metal (MIM) capacitors with (HfO2)(1-x)(Al2O3)(x) high-kappa dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature, coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)(1-x)(Al2O3)(x) MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fF/muM(2)) and low VCC values (similar to 140 ppm/V-2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)(1-x)(Al2O3)(x) MIM capacitors after N-2 annealing at 400 degreesC. All these show that the (HfO2)(0.86)(Al2O3)(0.14) MIM capacitor is very suitable for the capacitor applications within the. thermal budget of the back end of line process. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TA2O5 FILMS | - |
dc.title | MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000182516600003 | - |
dc.identifier.scopusid | 2-s2.0-0038732577 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 60 | - |
dc.citation.endingpage | 62 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2002.807703 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hu, H | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Yu, XF | - |
dc.contributor.nonIdAuthor | Chin, A | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.contributor.nonIdAuthor | Foo, PD | - |
dc.contributor.nonIdAuthor | Yu, MB | - |
dc.contributor.nonIdAuthor | Liu, XY | - |
dc.contributor.nonIdAuthor | Winkler, J | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | dispersion | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
dc.subject.keywordAuthor | thin-film devices | - |
dc.subject.keywordAuthor | voltage linearity | - |
dc.subject.keywordPlus | TA2O5 FILMS | - |
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