MOS characteristics of substituted Al gate on high-kappa dielectric
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, CS | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.contributor.author | Kwong, DL | ko |
| dc.date.accessioned | 2013-03-03T19:02:59Z | - |
| dc.date.available | 2013-03-03T19:02:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-11 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/80014 | - |
| dc.description.abstract | Substituted aluminum (SA) metal gate on high-kappa gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 degreesC. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | MOS characteristics of substituted Al gate on high-kappa dielectric | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000224712000005 | - |
| dc.identifier.scopusid | 2-s2.0-8344247768 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 25 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 725 | - |
| dc.citation.endingpage | 727 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/led.2004.837537 | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Park, CS | - |
| dc.contributor.nonIdAuthor | Kwong, DL | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | aluminum | - |
| dc.subject.keywordAuthor | CMOS | - |
| dc.subject.keywordAuthor | fully silicided (FUSI) | - |
| dc.subject.keywordAuthor | high-kappa | - |
| dc.subject.keywordAuthor | metal gate | - |
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