Fabrication and characterization of Pb(ZrTi)O(3) (PZT) ultra-thin films below 100nm

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The dependence of piezoelectric properties of PZT thin films on film thickness was investigated using atomic force microscope (AFM) assisted domain imaging technique. PZT thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrates at 375degreesC by radio frequency (RF) magnetron sputtering. As the thickness of PZT thin film increased, the preferred orientation of PZT thin film changed from (110) to (100). The shape of tip vibration amplitude was asymmetric and the piezo-response of PZT thin films increased with increasing film thickness. And the piezo-response had an inverse dependence on the volume density of PZT films. We describe the relationship between microstructure and piezoelectric properties of PZT ultra-thin films.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2002
Language
English
Article Type
Article; Proceedings Paper
Keywords

ELECTRICAL-PROPERTIES; FORCE MICROSCOPY; DEPENDENCE

Citation

FERROELECTRICS, v.271, pp.1647 - 1652

ISSN
0015-0193
URI
http://hdl.handle.net/10203/7917
Appears in Collection
MS-Journal Papers(저널논문)
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