Thermally stable structure of InGaP/GaAs Hetero-junction Bipolar Transistor: Dual-emitter structure

Abstract

We propose a new structure of InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) with dual emitter fingers for power amplifier application. which is optimized for uniform thermal distribution within the device. The optimized thermal management C of the proposed HBT relaxes the current decrease by a factor of 1.41 under active current bias. and prevents current gain collapse up to V-CE of 8 V, while a conventional device shows a significant collapse at V-CE = 6.2 V.