DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, S | ko |
dc.contributor.author | Lee, B | ko |
dc.contributor.author | Kim, T | ko |
dc.contributor.author | Yang, Kyounghoon | ko |
dc.date.accessioned | 2013-03-03T14:29:50Z | - |
dc.date.available | 2013-03-03T14:29:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-06 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.40, no.13, pp.792 - 793 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/79083 | - |
dc.description.abstract | A new CML-type monostable/bistable logic element IC is fabricated using monolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs heterojunction bipolar transistors (HBTs). The D-flip-flop function of the fabricated circuit is confirmed up to 20 Gbit/s at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | RESONANT-TUNNELING DIODES | - |
dc.title | CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology | - |
dc.type | Article | - |
dc.identifier.wosid | 000222472300003 | - |
dc.identifier.scopusid | 2-s2.0-3042735749 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 13 | - |
dc.citation.beginningpage | 792 | - |
dc.citation.endingpage | 793 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el:20040540 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | Choi, S | - |
dc.contributor.nonIdAuthor | Lee, B | - |
dc.contributor.nonIdAuthor | Kim, T | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | RESONANT-TUNNELING DIODES | - |
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