CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology

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dc.contributor.authorChoi, Sko
dc.contributor.authorLee, Bko
dc.contributor.authorKim, Tko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2013-03-03T14:29:50Z-
dc.date.available2013-03-03T14:29:50Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-06-
dc.identifier.citationELECTRONICS LETTERS, v.40, no.13, pp.792 - 793-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/79083-
dc.description.abstractA new CML-type monostable/bistable logic element IC is fabricated using monolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs heterojunction bipolar transistors (HBTs). The D-flip-flop function of the fabricated circuit is confirmed up to 20 Gbit/s at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectRESONANT-TUNNELING DIODES-
dc.titleCML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology-
dc.typeArticle-
dc.identifier.wosid000222472300003-
dc.identifier.scopusid2-s2.0-3042735749-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.issue13-
dc.citation.beginningpage792-
dc.citation.endingpage793-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:20040540-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorChoi, S-
dc.contributor.nonIdAuthorLee, B-
dc.contributor.nonIdAuthorKim, T-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRESONANT-TUNNELING DIODES-
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