DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, SY | ko |
dc.contributor.author | Kim, MJ | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-03T14:07:13Z | - |
dc.date.available | 2013-03-03T14:07:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.83, pp.2778 - 2780 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/79006 | - |
dc.description.abstract | The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 matrix, were prepared by electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of SiH4 and O-2 with cosputtering of Nd and subsequent anneal at 950 degreesC. Efficient Nd3+ luminescence with moderate temperature quenching is observed. Based on an analysis of the temperature dependence of Nd3+ luminescence lifetime, we find a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+ via quantum-confined excitons, while weak enough to result in a small back-transfer rate is identified as the key to Nd3+ luminescence. (C) 2003 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | 1.54 MU-M | - |
dc.subject | RARE-EARTH IONS | - |
dc.subject | SI NANOCRYSTALS | - |
dc.subject | ENERGY-TRANSFER | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ER3+ LUMINESCENCE | - |
dc.subject | POROUS SILICON | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | TEMPERATURE | - |
dc.subject | MECHANISMS | - |
dc.title | The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000185664000016 | - |
dc.identifier.scopusid | 2-s2.0-0142198484 | - |
dc.type.rims | ART | - |
dc.citation.volume | 83 | - |
dc.citation.beginningpage | 2778 | - |
dc.citation.endingpage | 2780 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1615837 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Seo, SY | - |
dc.contributor.nonIdAuthor | Kim, MJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | 1.54 MU-M | - |
dc.subject.keywordPlus | RARE-EARTH IONS | - |
dc.subject.keywordPlus | SI NANOCRYSTALS | - |
dc.subject.keywordPlus | ENERGY-TRANSFER | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ER3+ LUMINESCENCE | - |
dc.subject.keywordPlus | POROUS SILICON | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | MECHANISMS | - |
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