DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, MY | ko |
dc.contributor.author | Huang, CH | ko |
dc.contributor.author | Chin, A | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Li, MF | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-03T13:52:18Z | - |
dc.date.available | 2013-03-03T13:52:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-10 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/78952 | - |
dc.description.abstract | Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ALTIOX | - |
dc.title | Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000185719300003 | - |
dc.identifier.scopusid | 2-s2.0-0242368175 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 431 | - |
dc.citation.endingpage | 433 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2003.818532 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yang, MY | - |
dc.contributor.nonIdAuthor | Huang, CH | - |
dc.contributor.nonIdAuthor | Chin, A | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | capacitor | - |
dc.subject.keywordAuthor | dielectric constant | - |
dc.subject.keywordAuthor | frequency dependence | - |
dc.subject.keywordAuthor | high K | - |
dc.subject.keywordAuthor | MIM | - |
dc.subject.keywordAuthor | RF | - |
dc.subject.keywordPlus | ALTIOX | - |
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