Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

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dc.contributor.authorLoh, WYko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorJoo, MSko
dc.contributor.authorLi, MFko
dc.contributor.authorChan, DSHko
dc.contributor.authorMathew, Sko
dc.contributor.authorKwong, DLko
dc.date.accessioned2013-03-03T13:47:09Z-
dc.date.available2013-03-03T13:47:09Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-12-
dc.identifier.citationIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10203/78936-
dc.description.abstractCharge trapping and breakdown.:mechanism in p- and n-channel MOSFETs with an HfA1(x)O(y) and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAlx O-y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleCharge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation-
dc.typeArticle-
dc.identifier.wosid000226617100017-
dc.identifier.scopusid2-s2.0-13444309342-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue4-
dc.citation.beginningpage696-
dc.citation.endingpage703-
dc.citation.publicationnameIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY-
dc.identifier.doi10.1109/TDMR.2004.838416-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorChan, DSH-
dc.contributor.nonIdAuthorMathew, S-
dc.contributor.nonIdAuthorKwong, DL-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorgate leakage current-
dc.subject.keywordAuthorgate stacks-
dc.subject.keywordAuthorhigh-K dielectrics-
dc.subject.keywordAuthorreliability-
dc.subject.keywordAuthortunneling-
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