DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chon, U | ko |
dc.contributor.author | Jang, HM | ko |
dc.contributor.author | Shin, NS | ko |
dc.contributor.author | Kim, JS | ko |
dc.contributor.author | Ahn, DC | ko |
dc.contributor.author | Kim, YS | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.date.accessioned | 2008-11-19T05:41:55Z | - |
dc.date.available | 2008-11-19T05:41:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.388, pp.190 - 194 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/7876 | - |
dc.description.abstract | Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the non-volatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x = 0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2P(r) value of the BGdT capacitor was 75 mu C/cm(2) while it remained essentially constant up to 4.5 x 10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 mu C/cm(2) and a strong resistance against the imprinting failure. (c) 2006 Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | Ministry of Education, Korea through the BK 21 Program. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | BI3.25LA0.75TI3O12 THIN-FILMS | - |
dc.subject | FATIGUE-FREE BEHAVIOR | - |
dc.subject | PT/TI/SIO2/SI | - |
dc.subject | DECOMPOSITION | - |
dc.subject | RETENTION | - |
dc.title | Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges | - |
dc.type | Article | - |
dc.identifier.wosid | 000243887400030 | - |
dc.identifier.scopusid | 2-s2.0-33751219579 | - |
dc.type.rims | ART | - |
dc.citation.volume | 388 | - |
dc.citation.beginningpage | 190 | - |
dc.citation.endingpage | 194 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.identifier.doi | 10.1016/j.physb.2006.05.434 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Chon, U | - |
dc.contributor.nonIdAuthor | Jang, HM | - |
dc.contributor.nonIdAuthor | Shin, NS | - |
dc.contributor.nonIdAuthor | Kim, JS | - |
dc.contributor.nonIdAuthor | Ahn, DC | - |
dc.contributor.nonIdAuthor | Kim, YS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | gadolinium-modified bismuth titanate | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | fatigue-free | - |
dc.subject.keywordAuthor | FRAM | - |
dc.subject.keywordPlus | BI3.25LA0.75TI3O12 THIN-FILMS | - |
dc.subject.keywordPlus | FATIGUE-FREE BEHAVIOR | - |
dc.subject.keywordPlus | PT/TI/SIO2/SI | - |
dc.subject.keywordPlus | DECOMPOSITION | - |
dc.subject.keywordPlus | RETENTION | - |
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