A simple and accurate method for extracting substrate resistance of RF MOSFETs

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In this paper a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET whose substrate is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the measurement and the model having the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-07
Language
English
Article Type
Article
Keywords

FREQUENCY

Citation

IEEE ELECTRON DEVICE LETTERS, v.23, no.7, pp.434 - 436

ISSN
0741-3106
URI
http://hdl.handle.net/10203/78677
Appears in Collection
EE-Journal Papers(저널논문)RIMS Journal Papers
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