A simple and accurate method for extracting substrate resistance of RF MOSFETs

Abstract

In this paper a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET whose substrate is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the measurement and the model having the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.