DC Field | Value | Language |
---|---|---|
dc.contributor.author | S. S. Kim | ko |
dc.contributor.author | S. Hamaguchi | ko |
dc.contributor.author | N. S. Yoon | ko |
dc.contributor.author | Chang, Choong-Seock | ko |
dc.contributor.author | Y. D. Lee | ko |
dc.contributor.author | S. H. Ku | ko |
dc.date.accessioned | 2013-03-03T11:05:31Z | - |
dc.date.available | 2013-03-03T11:05:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-04 | - |
dc.identifier.citation | PHYSICS OF PLASMAS, v.8, no.4, pp.1384 - 1394 | - |
dc.identifier.issn | 1070-664X | - |
dc.identifier.uri | http://hdl.handle.net/10203/78434 | - |
dc.description.abstract | In high-density plasma etching processes for ultra-large-scale integrated (ULSI) circuits, the uniformity of the plasma over a large area is of major concern. Recently a resonant inductively coupled plasma source [S. S. Kim , Appl. Phys. Lett. 77, 492 (2000)] has been proposed for large-area plasma processing, which achieves large-area plasma uniformity by properly tuning its antenna with an external variable capacitor. In the present paper, the plasma transport and poly-Si etching characteristics of this plasma source have been numerically investigated using a self-consistent model for electron heating, plasma transport, and microscopic etching profiles. The numerical simulation results indicate that uniform poly-Si etching over 300 mm in diameter can be easily achieved in this plasma source. (C) 2001 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.subject | ION ENERGY | - |
dc.subject | GLOW-DISCHARGE | - |
dc.subject | FREQUENCY | - |
dc.subject | MODEL | - |
dc.subject | SIMULATION | - |
dc.subject | CHLORINE | - |
dc.subject | SILICON | - |
dc.subject | REACTOR | - |
dc.subject | ANTENNA | - |
dc.subject | SHEATH | - |
dc.title | Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source | - |
dc.type | Article | - |
dc.identifier.wosid | 000167613100036 | - |
dc.identifier.scopusid | 2-s2.0-0035309495 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1384 | - |
dc.citation.endingpage | 1394 | - |
dc.citation.publicationname | PHYSICS OF PLASMAS | - |
dc.identifier.doi | 10.1063/1.1350671 | - |
dc.contributor.localauthor | Chang, Choong-Seock | - |
dc.contributor.nonIdAuthor | S. S. Kim | - |
dc.contributor.nonIdAuthor | S. Hamaguchi | - |
dc.contributor.nonIdAuthor | N. S. Yoon | - |
dc.contributor.nonIdAuthor | Y. D. Lee | - |
dc.contributor.nonIdAuthor | S. H. Ku | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ION ENERGY | - |
dc.subject.keywordPlus | GLOW-DISCHARGE | - |
dc.subject.keywordPlus | FREQUENCY | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CHLORINE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | REACTOR | - |
dc.subject.keywordPlus | ANTENNA | - |
dc.subject.keywordPlus | SHEATH | - |
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