First-principles study of the compensation mechanism in N-doped ZnO

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Based on first-principles electronic structure calculations for N-related and native point defects in Zinc Oxide (ZnO), we propose a mechanism for the compensation of N acceptors. As compared to a normal N-2 source, the use of an active plasma N-2 gas generally increases the N solubility limit, because the N chemical potential is enhanced. However., whenever a pure N source is used, N acceptors are greatly compensated by donor defects, which may explain the difficulty in achieving low-resistance p-type ZnO. Major compensating donors for N acceptors are found to be different at low and high N doping levels, and also depend on the type of N-2 gas source. (C) 2001 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2001-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

THIN-FILMS; DEFECTS; GROWTH; ZNSE

Citation

PHYSICA B-CONDENSED MATTER, v.308, pp.912 - 915

ISSN
0921-4526
URI
http://hdl.handle.net/10203/78410
Appears in Collection
PH-Journal Papers(저널논문)
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