13GHz 4.67dB NF CMOS low-noise amplifier
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gil, JoonHo | ko |
| dc.contributor.author | Han, kwangseok | ko |
| dc.contributor.author | Shin, Hyung-Cheol | ko |
| dc.date.accessioned | 2013-03-03T10:10:40Z | - |
| dc.date.available | 2013-03-03T10:10:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-07 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.39, no.14, pp.1056 - 1058 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/78325 | - |
| dc.description.abstract | The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier (LNA) are presented. Effects of substrate resistances on LNA performance are discussed. The LNA has 4.67 dB noise figure and +8.5 dBm of input-referred third-order intercept point (IIP3) with a power consumption of 9.72 mW. | - |
| dc.language | English | - |
| dc.publisher | Inst Engineering Technology-Iet | - |
| dc.subject | RF-ICS | - |
| dc.subject | OPTIMIZATION | - |
| dc.subject | INDUCTORS | - |
| dc.title | 13GHz 4.67dB NF CMOS low-noise amplifier | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000184273400020 | - |
| dc.identifier.scopusid | 2-s2.0-0042346241 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 39 | - |
| dc.citation.issue | 14 | - |
| dc.citation.beginningpage | 1056 | - |
| dc.citation.endingpage | 1058 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el:20030687 | - |
| dc.contributor.localauthor | Shin, Hyung-Cheol | - |
| dc.contributor.nonIdAuthor | Gil, JoonHo | - |
| dc.contributor.nonIdAuthor | Han, kwangseok | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | RF-ICS | - |
| dc.subject.keywordPlus | OPTIMIZATION | - |
| dc.subject.keywordPlus | INDUCTORS | - |
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